Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes

著录项

• 来源
  《中国物理快报：英文版》 |2016年第11期|96-98|共3页
• 作者

  Ning Zhang; Xue-Cheng Wei; Kun-Yi Lu; Liang-Sen Feng; Jie Yang; Bin Xue; Zhe Liu;

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• 作者单位

  Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083;

  Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083;

  Electronic Information School, Wuhan University, Wuhan 430072;

  Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083;

  Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083;

  Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083;

  Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词