High-Mobility P-Type MOSFETs with Integrated Strained-Si0.73Ge0.27 Channels and High-κ/Metal Gates

著录项

• 来源
  《中国物理快报：英文版》 |2016年第11期|127-130|共4页
• 作者

  Shu-Juan Mao; Zheng-Yong Zhu; Gui-Lei Wang; Hui-Long Zhu; Jun-Feng Li; Chao Zhao;

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• 作者单位

  Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029;

  Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029;

  Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029;

  Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029;

  Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029;

  Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences,Beijing 100029;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
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