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Temperature Dependence of Raman Scattering in 4H-SiC Films under Different Growth Conditions

         

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  • 来源
    《中国物理快报:英文版》 |2015年第4期|134-138|共5页
  • 作者单位

    Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou 510631;

    State Key Laboratory of Optoelectronic Materials and Technologies and School of Physics and Engineering, Sun YatSen University, Guangzhou 510275;

    State Key Laboratory of Optoelectronic Materials and Technologies and School of Physics and Engineering, Sun YatSen University, Guangzhou 510275;

    State Key Laboratory of Optoelectronic Materials and Technologies and School of Physics and Engineering, Sun YatSen University, Guangzhou 510275;

    Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou 510631;

    The Key Laboratory of Space Applied Physics and Chemistry, Ministry of Education and Shaanxi Key Laboratory of Optical Information Technology, School of Science, Northwestern Polytechnical University, Xi'an 710072;

    Department of Mechanical Engineering, University of Malaya, Kuala Lumpur 50603, Malaysia;

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  • 正文语种 eng
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