GaNAs/InGaAs Superlattice Solar Cells with High N Content in the Barrier Grown by All Solid-State Molecular Beam Epitaxy

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• 来源
  《中国物理快报：英文版》 |2015年第5期|111-114|共4页
• 作者

  LU Jian-Ya; ZHENG Xin-He; WANG Nai-Ming; CHEN Xi; LI Bao-Ji; LU Shu-Long; YANG Hui;

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• 作者单位

  Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences, Suzhou 215123;

  School of Materials Science and Engineering, Shanghai University, Shanghai 200444;

  Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences, Suzhou 215123;

  Department of Physics, College of Mathematics and Physics, University of Science and Technology Beijing,Beijing 100083;

  Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences, Suzhou 215123;

  Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences, Suzhou 215123;

  Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences, Suzhou 215123;

  Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences, Suzhou 215123;

  Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences, Suzhou 215123;

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• 原文格式 PDF
• 正文语种 eng
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