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Bismuth Effects on Electronic Levels in GaSb(Bi)/AlGaSb Quantum Wells Probed by Infrared Photoreflectance

         

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  • 来源
    《中国物理快报:英文版》 |2015年第6期|127-130|共4页
  • 作者单位

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Shanghai 200083;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Shanghai 200083;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Shanghai 200083;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Shanghai 200083;

    Department of Physics, Shanghai University, Shanghai 200444;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Shanghai 200083;

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  • 正文语种 eng
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