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Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN

         

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  • 来源
    《中国物理快报:英文版》 |2015年第9期|145-148|共4页
  • 作者单位

    School of Electronic Science and Engineering, National Laboratory of Solid State Microstructure, and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093;

    School of Electronic Science and Engineering, National Laboratory of Solid State Microstructure, and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093;

    School of Electronic Science and Engineering, National Laboratory of Solid State Microstructure, and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093;

    School of Electronic Science and Engineering, National Laboratory of Solid State Microstructure, and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093;

    School of Electronic Science and Engineering, National Laboratory of Solid State Microstructure, and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093;

    School of Electronic Science and Engineering, National Laboratory of Solid State Microstructure, and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093;

    School of Electronic Science and Engineering, National Laboratory of Solid State Microstructure, and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093;

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  • 正文语种 eng
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