Improved Performance of Phthalocyanine Derivative Field-Effect Transistors by Inserting a Para-Quarterphenyl as the Inducing Layer

著录项

• 来源
  《中国物理快报：英文版》 |2014年第5期|183-186|共4页
• 作者

  DONG Ni; WU Xiao-Ming; DANG Huan-Qin; LIU Dong-Yue; ZHANG Qiang; WEI Jun; YIN Shou-Gen;

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• 作者单位

  Institute of Material Physics, Tianjin University of Technology, Tianjin 300384;

  Key Laboratory of Display Material and Photoelectric Devices(Ministry of Education),Tianjin University of Technology, Tianjin 300384;

  Institute of Material Physics, Tianjin University of Technology, Tianjin 300384;

  Key Laboratory of Display Material and Photoelectric Devices(Ministry of Education),Tianjin University of Technology, Tianjin 300384;

  Institute of Material Physics, Tianjin University of Technology, Tianjin 300384;

  Key Laboratory of Display Material and Photoelectric Devices(Ministry of Education),Tianjin University of Technology, Tianjin 300384;

  Institute of Material Physics, Tianjin University of Technology, Tianjin 300384;

  Key Laboratory of Display Material and Photoelectric Devices(Ministry of Education),Tianjin University of Technology, Tianjin 300384;

  Institute of Material Physics, Tianjin University of Technology, Tianjin 300384;

  Key Laboratory of Display Material and Photoelectric Devices(Ministry of Education),Tianjin University of Technology, Tianjin 300384;

  Key Laboratory of Display Material and Photoelectric Devices(Ministry of Education),Tianjin University of Technology, Tianjin 300384;

  Singapore Institute of Manufacturing Technology, 71 Nanyang Drive 638075, Singapore;

  Institute of Material Physics, Tianjin University of Technology, Tianjin 300384;

  Key Laboratory of Display Material and Photoelectric Devices(Ministry of Education),Tianjin University of Technology, Tianjin 300384;

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• 原文格式 PDF
• 正文语种 eng
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