首页> 中文期刊> 《中国物理快报:英文版》 >A Silicon-Based Positive-Intrinsic-Negative Photodetector Double Linear Array on a Thick Intrinsic Epitaxial Layer

A Silicon-Based Positive-Intrinsic-Negative Photodetector Double Linear Array on a Thick Intrinsic Epitaxial Layer

         

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  • 来源
    《中国物理快报:英文版》 |2014年第5期|187-190|共4页
  • 作者单位

    Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology,Tsinghua University, Beijing 100084;

    Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology,Tsinghua University, Beijing 100084;

    Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083;

    Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology,Tsinghua University, Beijing 100084;

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  • 正文语种 eng
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