首页> 中文期刊> 《中国物理快报:英文版》 >Polarization Induced High Al Composition AlGaN p-n Junction Grown on Silicon Substrates

Polarization Induced High Al Composition AlGaN p-n Junction Grown on Silicon Substrates

         

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  • 来源
    《中国物理快报:英文版》 |2014年第11期|152-154|共3页
  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054;

    Department of Electrical & Computer Engineering, University of Kentucky, Lexington, KY 40506, USA;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054;

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  • 正文语种 eng
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