Fast Homoepitaxial Growth of 4H-SiC Films on 4° off-Axis Substrates in a SiH4-C2H4-H2 System

著录项

• 来源
  《中国物理快报：英文版》 |2013年第12期|157-160|共4页
• 作者

  LIU Bin; SUN Guo-Sheng; LIU Xing-Fang; ZHANG Feng; DONG Lin; ZHENG Liu; YAN Guo-Guo;

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• 作者单位

  Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

  Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

  Dongguan Tianyu Semiconductor, Inc., Dongguan 523000;

  Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

  Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

  Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

  Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

  Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

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• 原文格式 PDF
• 正文语种 eng
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