Optoelectronic Properties of Pure and Co Doped Indium Oxide by Hubbard and modified Becke-Johnson Exchange Potentials

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• 来源
  《中国物理快报：英文版》 |2013年第12期|107-111|共5页
• 作者

  H.A.Rahnamaye Aliabad; M.Bazrafshan; H.Vaezi; Masood Yousaf; Junaid Munir; M.A.Saeed;

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• 作者单位

  Department of Physics, Hakim Sabzevari University, Sabzevar, Iran;

  Department of Physics, Khayyam Institute of Higher Education, Mashhad, Iran;

  Department of Physics, Khayyam Institute of Higher Education, Mashhad, Iran;

  Department of Physics, Universiti Teknologi Malaysia, Skudai 81310, Johor, Malaysia;

  Department of Physics, Universiti Teknologi Malaysia, Skudai 81310, Johor, Malaysia;

  Department of Physics, Universiti Teknologi Malaysia, Skudai 81310, Johor, Malaysia;

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• 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
• 原文格式 PDF
• 正文语种 eng
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