Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors

LI Shao-Juan; HE Xin; HAN De-Dong; SUN Lei; WANG Yi; HAN Ru-Qi; CHAN Man-Sun; ZHANG Sheng-Dong

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Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors

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The structural and electrical properties of ZnO 61ms deposited by reactive radiofrequency sputtering with a metallic zinc target are systematically investigated. While the as-deposited ZnO film is in a poly-crystalline structure when the partial pressure of oxygen (pO2) is low, the grain size abruptly decreases to a few nanometers as pO2 increases to a criticaJ vaiue, and then becomes almost unchanged with a further increase in pO2.In addition, the resistivity of the ZnO films shows a non-monotonic dependence on pO2, including an abrupt transition of about seven orders of magnitude at the critical pO2. Thin-film transistors (TFTs) with the nanocrystalline ZnO films as channel layers have an on/off current ratio of more than 107, an off-current in the order of pA, a threshold voltage of about 4.5 V, and a carrier mobility of about 2cm2/(V-s). The results show that radiofrequency sputtered ZnO with a zinc target is a promising candidate for high-performance ZnO TFTs.%The structural and electrical properties of ZnO films deposited by reactive radiofrequency sputtering with a metallic zinc target are systematically investigated.While the as-deposited ZnO film is in a poly-crystalline structure when the partial pressure of oxygen (pO2 ) is low,the grain size abruptly decreases to a few nanometers as pO2 increases to a critical value,and then becomes almost unchanged with a further increase in pO2.In addition,the resistivity of the ZnO films shows a non-monotonic dependence on pO2,including an abrupt transition of about seven orders of magnitude at the critical pO2.Thin-film transistors (TFTs) with the nanocrystalline ZnO films as channel layers have an on/off current ratio of more than 10 7,an off-current in the order of pA,a threshold voltage of about 4.5 V,and a carrier mobility of about 2 cm2/(V.s).The results show that radiofrequency sputtered ZnO with a zinc target is a promising candidate for high-performance ZnO TFTs.

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《中国物理快报：英文版》 |2012年第1期|283-286|共4页
作者
LI Shao-Juan; HE Xin; HAN De-Dong; SUN Lei; WANG Yi; HAN Ru-Qi; CHAN Man-Sun; ZHANG Sheng-Dong;
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Institute of Microelectronics, Peking University, Beijing 100871;

Shenzhen Graduate School, Peking University, Shenzhen 518055;

Institute of Microelectronics, Peking University, Beijing 100871;

Institute of Microelectronics, Peking University, Beijing 100871;

Institute of Microelectronics, Peking University, Beijing 100871;

Institute of Microelectronics, Peking University, Beijing 100871;

Institute of Microelectronics, Peking University, Beijing 100871;

Hong Kong University of Science and Technology, Hong Kong;

Institute of Microelectronics, Peking University, Beijing 100871;

Shenzhen Graduate School, Peking University, Shenzhen 518055;

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Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors

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