首页> 中文期刊> 《中国物理快报:英文版》 >Enhanced Light Output of InGaN-Based Light Emitting Diodes with Roughed p-Type GaN Surface by Using Ni Nanoporous Template

Enhanced Light Output of InGaN-Based Light Emitting Diodes with Roughed p-Type GaN Surface by Using Ni Nanoporous Template

         

摘要

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著录项

  • 来源
    《中国物理快报:英文版》 |2012年第9期|219-221|共3页
  • 作者单位

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093;

    Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009;

    Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009;

    Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009;

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