Performance Improvement of Ambipolar Organic Field Effect Transistors by Inserting a MoO3 Ultrathin Layer

著录项

• 来源
  《中国物理快报：英文版》 |2012年第9期|222-225|共4页
• 作者

  TIAN Hai-Jun; CHENG Xiao-Man; ZHAO Geng; LIANG Xiao-Yu; DU Bo-Qun; WU Feng;

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• 作者单位

  Institute of Material Physics, Key Laboratory of Display Material and Photoelectric Devices(Ministry of Education),and Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384;

  Institute of Material Physics, Key Laboratory of Display Material and Photoelectric Devices(Ministry of Education),and Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384;

  School of Science, Tianjin University of Technology, Tianjin 300384;

  School of Science, Tianjin University of Technology, Tianjin 300384;

  Institute of Material Physics, Key Laboratory of Display Material and Photoelectric Devices(Ministry of Education),and Tianjin Key Laboratory of Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384;

  School of Science, Tianjin University of Technology, Tianjin 300384;

  School of Science, Tianjin University of Technology, Tianjin 300384;

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• 原文格式 PDF
• 正文语种 chi
• 中图分类
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