Denuded Zone Formation in Germanium Codoped Heavily Phosphorus-Doped Czochralski Silicon

LIN Li-Xia; CHEN Jia-He; WU Peng; ZENG Yu-Heng; MA Xiang-Yang; YANG De-Ren

首页> 中文期刊> 《中国物理快报：英文版》 >Denuded Zone Formation in Germanium Codoped Heavily Phosphorus-Doped Czochralski Silicon

Denuded Zone Formation in Germanium Codoped Heavily Phosphorus-Doped Czochralski Silicon

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相关主题

摘要

The formation of a denuded zone(DZ) by conventional furnace annealing(CFA) and rapid thermal annealing (RTA) based denudation processing is investigated and the gettering of copper(Cu) atoms in germanium co-doped heavily phosphorus-doped Czochralski(GHPCZ)silicon wafers is evaluated. It is suggested that both a good quality defect-free DZ with a suitable width in the sub-surface area and a high density bulk micro-defect(BMD)region could be formed in heavily phosphorus-doped Czochralski(HPCZ)silicon and GHPCZ silicon wafers.This is ascribed to the formation of phosphorus-vacancy(P-V) related complexes and germanium-vacancy(GeV) related complexes. Compared with HPCZ silicon, the DZ width is wider in the GHPCZ silicon sample with CFA-based denudation processing but narrower in the one with two-step RTA pretreatments. These phenomena are ascribed to the enhancing effect of germanium on oxygen out-diffusion movement and oxygen precipitate nucleation, respectively. Furthermore, fairly clean DZs near the surface remain in both the HPCZ and GHPCZ silicon wafers after Cu in-diffusion, except for the HPCZ silicon wafer which underwent denudation processing with a CFA pretreatment, suggesting that germanium doping could improve the gettering of Cu contamination.

著录项

来源
《中国物理快报：英文版》 |2011年第3期|152-155|共4页
作者
LIN Li-Xia; CHEN Jia-He; WU Peng; ZENG Yu-Heng; MA Xiang-Yang; YANG De-Ren;
展开▼
作者单位

State Key Laboratory of Silicon Materials and the Department of Materials Science and Engineering, Zhejiang University, Hangzhou,310027;

State Key Laboratory of Silicon Materials and the Department of Materials Science and Engineering, Zhejiang University, Hangzhou,310027;

Institut f(u)r Angewandte Physik, Technische Universit(a)t Dresden, D-01062 Dresden, Germany;

State Key Laboratory of Silicon Materials and the Department of Materials Science and Engineering, Zhejiang University, Hangzhou,310027;

State Key Laboratory of Silicon Materials and the Department of Materials Science and Engineering, Zhejiang University, Hangzhou,310027;

State Key Laboratory of Silicon Materials and the Department of Materials Science and Engineering, Zhejiang University, Hangzhou,310027;

State Key Laboratory of Silicon Materials and the Department of Materials Science and Engineering, Zhejiang University, Hangzhou,310027;

展开▼
原文格式 PDF
正文语种 chi
中图分类
关键词

Denuded Zone Formation in Germanium Codoped Heavily Phosphorus-Doped Czochralski Silicon

摘要

著录项

相关主题

期刊订阅