首页> 中文期刊> 《中国物理快报:英文版》 >Subband Light Emission from Phosphorous-Doped Amorphous Si/SiO2 Multilayers at Room Temperature

Subband Light Emission from Phosphorous-Doped Amorphous Si/SiO2 Multilayers at Room Temperature

         

摘要

@@ Phosphorous-doped hydrogenated amorphous Si/SiO<,2> multilayer structures are fabricated in a plasma enhanced chemical vapor deposition system.The microstructural and luminescence properties of the samples are charac- terized after annealing at various temperatures.Under the onset crystallization temperature 800-900℃, a strong subband infrared light emission in the range 1.1-1.8μm is observed at room temperature instead of the usually observed visible light emission.This subband infrared emission is gradually enhanced with the increase of phos- phorus doping concentration, which can be ascribed to the increase of the luminescent defect states promoted by the doped phosphorous atoms.

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  • 来源
    《中国物理快报:英文版》 |2011年第6期|291-294|共4页
  • 作者单位

    Nanjing National Laboratory of Microstructures, Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanfing University, Nanjing 210093;

    Nanjing National Laboratory of Microstructures, Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanfing University, Nanjing 210093;

    Nanjing National Laboratory of Microstructures, Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanfing University, Nanjing 210093;

    Nanjing National Laboratory of Microstructures, Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanfing University, Nanjing 210093;

    Nanjing National Laboratory of Microstructures, Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanfing University, Nanjing 210093;

    Nanjing National Laboratory of Microstructures, Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanfing University, Nanjing 210093;

    Nanjing National Laboratory of Microstructures, Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanfing University, Nanjing 210093;

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