Electrical, Structural and Interfacial Characterization of HfO2 Films on Si Substrates

TAN Ting-Ting; LIU Zheng-Tang; LI Yan-Yan

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Electrical, Structural and Interfacial Characterization of HfO2 Films on Si Substrates

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@@ Hafnium oxide films are deposited on Si(100) substrates by means of rf magnetron sputtering.The interfacial structure is studied using high-resolution transmission electron microscopy(HRTEM) and x-ray photoelectron spectroscopy(XPS), and the electrical properties of the Au/ HfO2/Si stack are analyzed by frequency-dependent capacitance-voltage(C-V-f) measurements.The amorphous interfacial layer between HfO2 and the Si substrate is observed by the HRTEM method.From the results of XPS, the interfacial layer comprises hafnium silicate and silicon oxide.For C-V-f measurements, the C-V plots show a peak at a low frequency and the change in frequency has effects on the intensity of the peak.As expected, rapid thermal annealing can passivate the interface states of the HfO2/Si stack.

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《中国物理快报：英文版》 |2011年第8期|240-242|共3页
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TAN Ting-Ting; LIU Zheng-Tang; LI Yan-Yan;
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State Key Laboratory of Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University,Xi'an 710072;

State Key Laboratory of Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University,Xi'an 710072;

State Key Laboratory of Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University,Xi'an 710072;

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Electrical, Structural and Interfacial Characterization of HfO2 Films on Si Substrates

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