Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure

HUANG Jian; CHEN Kun-Ji; FANG Zhong-Hui; GUO Si-Hua; WANG Xiang; DING Hong-Lin; LI Wei; HUANG Xin-Fan

首页> 中文期刊> 《中国物理快报：英文版》 >Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure

Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure

开具论文收录证明 >>

期刊封面封底目录下载 >>

文献代查 >>

页面导航

摘要
著录项
相关主题

摘要

The nanocrystai-Si quantum dot (nc-Si QD) floating gate MOS structure is fabricated by using plasma-enhanced chemical vapour deposition (PECVD) and furnace oxidation technology.The capacitance hysteresis in capacitancevoltage (C - V) measurements confirm the charging effect of nc-Si QDs.Asymmetric charging current peaks both for electrons and holes have been observed in current-voltage (I - V) measurements at room temperature for the first time.The characteristic and the origin of these current peaks in this nc-Si QD MOS structure is investigated systematically.Moreover,the charge density (10-7 C/cm2) calculated from the charging current peaks in the I - V measurements at different sweep rates shows that each quantum dot is charged by one carrier.The difference of charging threshold voltages between the electrons and holes charging peaks,△VG,can be explained by the quantum confinement effect of the nc-Si dots in size of about 3.5 nm.

著录项

来源
《中国物理快报：英文版》 |2009年第3期|220-223|共4页
作者
HUANG Jian; CHEN Kun-Ji; FANG Zhong-Hui; GUO Si-Hua; WANG Xiang; DING Hong-Lin; LI Wei; HUANG Xin-Fan;
展开▼
作者单位

National Laboratory of Solid State Microstructures and Department of Physics,Nanjing University,Nanjing 210093;

National Laboratory of Solid State Microstructures and Department of Physics,Nanjing University,Nanjing 210093;

National Laboratory of Solid State Microstructures and Department of Physics,Nanjing University,Nanjing 210093;

National Laboratory of Solid State Microstructures and Department of Physics,Nanjing University,Nanjing 210093;

National Laboratory of Solid State Microstructures and Department of Physics,Nanjing University,Nanjing 210093;

National Laboratory of Solid State Microstructures and Department of Physics,Nanjing University,Nanjing 210093;

National Laboratory of Solid State Microstructures and Department of Physics,Nanjing University,Nanjing 210093;

National Laboratory of Solid State Microstructures and Department of Physics,Nanjing University,Nanjing 210093;

展开▼
原文格式 PDF
正文语种 chi
中图分类物理学;
关键词

Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure

摘要

著录项

相关主题

期刊订阅