Controlled Evolution of Silicon Nanocone Arrays Induced by Ar+ Sputtering at Room Temperature

LI Qin-Tao; LI Zhi-Gang; XIE Qiao-Ling; GONG Jin-Long; ZHU De-Zhang

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Controlled Evolution of Silicon Nanocone Arrays Induced by Ar+ Sputtering at Room Temperature

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Controlled evolution of silicon nanocone arrays induced by Ar+ sputtering at room temperature, using the coating carbon as a mask, is demonstrated. The investigation of scanning electron microscopy indicates that the morphology of silicon nanostructures can be controlled by adjusting the thickness of the coating carbon film.Increasing the thickness of the coating carbon film from 50-6Onm, 250-300nm and 750-800nm to 150Onm, the morphologies of silicon nanostructures are transformed from smooth surface ripple, coarse surface ripple and surface ripple with densely distributed nanocones to nanocone arrays with a high density of about 1 × 109-2 × 109 cm-2.

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《中国物理快报：英文版》 |2009年第5期|169-172|共4页
作者
LI Qin-Tao; LI Zhi-Gang; XIE Qiao-Ling; GONG Jin-Long; ZHU De-Zhang;
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Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800;

Department of Physics, Taizhou Univeristy, Taizhou 317000;

Department of Physics, Taizhou Univeristy, Taizhou 317000;

Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800;

Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800;

Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800;

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正文语种 chi
中图分类物理学;
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Controlled Evolution of Silicon Nanocone Arrays Induced by Ar+ Sputtering at Room Temperature

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