Hole Spin Relaxation in an Ultrathin InAs Monolayer

LI Tao; ZHU Yong-Gang; ZHANG Xin-Hui; MA Shan-Shan; WANG Peng-Fei; NIU Zhi-Chuan

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Hole Spin Relaxation in an Ultrathin InAs Monolayer

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We investigate the spin relaxation time of holes in an ultrathin neutral InAs monolayer (1.5 ML) and compare with that of electrons, using polarization-dependent time-resolved photoluminescence (TRPL) experiments. With excitation energies above the GaAs gap, we observe a rather slow relaxation of holes (T1h = 196 ± 17 ps) that is in the magnitude similar to electrons (T1e = 354 ± 32 ps) in this ultrathin sample. The results are in good agreement with earlier theoretical prediction, and the phonon scattering due to spin-orbit coupling is realized to play a dominant role in the carrier spin kinetics.

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《中国物理快报：英文版》 |2009年第5期|210-213|共4页
作者
LI Tao; ZHU Yong-Gang; ZHANG Xin-Hui; MA Shan-Shan; WANG Peng-Fei; NIU Zhi-Chuan;
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State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

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中图分类物理学;
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Hole Spin Relaxation in an Ultrathin InAs Monolayer

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