Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films

XIAO Hai-Qing; ZHOU Chun-Lan; CAO Xiao-Ning; WANG Wen-Jing; ZHAO Lei; LI Hai-Ling; DIAO Hong-Wei

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Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films

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Al2O3 films with a thickness of about 100nm synthesized by spin coating and thermally treated are applied for field-induced surface passivation of p-type crystalline silicon.The level of surface passivation is determined by techniques baaed on photoconductance,An effective surface recombination velocity below 100cm/s is obtained on 10Ω·cm p-type c-Si wafers (Cz Si).A high density of negative fixed charges in the order of 1012 cm-2 is detected in the Al2O3 films and its impact on the level of surface passivation is demonstrated experimentally.Furthermore,a comparison between the surface paasivation achieved for thermal SiO2 and plasma enhanced chemical vapor deposition SiNx:H films on the same c-Si is presented.The high negative fixed charge density explains the excellent passivation of p-type c-Si by Al2O3.

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《中国物理快报：英文版》 |2009年第8期|353-356|共4页
作者
XIAO Hai-Qing; ZHOU Chun-Lan; CAO Xiao-Ning; WANG Wen-Jing; ZHAO Lei; LI Hai-Ling; DIAO Hong-Wei;
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作者单位

Institute of Industrial Product Inspection,Chinese Academy of Inspection and Quarantine,Beijing 100123;

Solar Cell Technology Laboratory,Institute of Electrical Engineering,Chinese Academy of Sciences,PO Box 2703,Beijing 100190;

Solar Cell Technology Laboratory,Institute of Electrical Engineering,Chinese Academy of Sciences,PO Box 2703,Beijing 100190;

Solar Cell Technology Laboratory,Institute of Electrical Engineering,Chinese Academy of Sciences,PO Box 2703,Beijing 100190;

Solar Cell Technology Laboratory,Institute of Electrical Engineering,Chinese Academy of Sciences,PO Box 2703,Beijing 100190;

Solar Cell Technology Laboratory,Institute of Electrical Engineering,Chinese Academy of Sciences,PO Box 2703,Beijing 100190;

Solar Cell Technology Laboratory,Institute of Electrical Engineering,Chinese Academy of Sciences,PO Box 2703,Beijing 100190;

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正文语种 chi
中图分类物理学;
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Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films

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