首页> 中文期刊> 《中国物理快报:英文版》 >Investigation of SOI Substrates Incorporated with Buried MoSi2 for High Frequency SiGe HBTs

Investigation of SOI Substrates Incorporated with Buried MoSi2 for High Frequency SiGe HBTs

         

摘要

Highly arsenic-doped Si-on-insulator(SOI) substrate incorporated with buried MoSi2 layers js fabricated aiming at decreasing the collector series resistance of SiGe heterojunction bipolar transistors(HBTs)on SOI,thereby enhancing cutoff frequency(fT)performance and increasing the maximum value of fT(fTMAX).The,fT performance at medium current is enhanced and current required for fT=15 GHz is reduced by half.The value of fTMAX is improved by 30%.

著录项

  • 来源
    《中国物理快报:英文版》 |2008年第1期|227-229|共3页
  • 作者单位

    Nano Technology Laboratory,State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050;

    Graduate University of Chinese Academy of Sciences;

    Beijing 100049;

    Nano Technology Laboratory,State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050;

    Nano Technology Laboratory,State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050;

    Graduate University of Chinese Academy of Sciences;

    Beijing 100049;

    Nano Technology Laboratory,State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050;

    Nano Technology Laboratory,State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050;

    Nano Technology Laboratory,State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 物理学;
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