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Physical mechanism of two-photon response in semi-insulating GaAs

         

摘要

The physical mechanism of two-photon response(TPR)in semi-insulating CaAs is studied.The measured photocurrent generated from the fabricated hemispherical GaAs sample responding to 1.3μm continuous wave laser shows a quadratic dependence on the coupled optical power and no saturation with the bias.The angular dependence of the photocurrent on the azimuth is in agreement with the anisotropy of double-frequency absorption(DFA)in GaAs single crystals.These results demonstrate DFA is the dominant mechanism of TPR in GaAs.

著录项

  • 来源
    《中国物理快报:英文版》 |2008年第1期|125-128|共4页
  • 作者单位

    State Key Laboratory on Integrated Optoelectronics,College of Communication Engineering,Jilin University,Changchun 130012;

    State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012;

    State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012;

    State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 物理学;
  • 关键词

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