Minority Carrier Lifetime in As-Grown Germanium Doped Czochralski Silicon

ZHU Xin; YANG De-Ren; LI Ming; CHEN Tao; WANG Lei; QUE Duan-Lin

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Minority Carrier Lifetime in As-Grown Germanium Doped Czochralski Silicon

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The minority carrier lifetime of as-gown germanium-doped Czochralski(GCZ)silicon wafers doped with germanium concentrations[Ge]=1016-1018 cm-3 is investigated in comparison with conventional CZ silicon samples.It is found that the lifetime distribution along the ingot changes with the variation of[Ge].There is a critical value of[Ge]=1016 cm-3 beyond which Ge can obviously influence the lifetime of as-grown ingots.This phenomenon is considered to be associated with the competition or combination between the oxygen related thermal donors (TDs)and electrically active Ge-related complexes.The related formation mechanisms and distributions are also discussed.

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《中国物理快报：英文版》 |2008年第2期|651-653|共3页
作者
ZHU Xin; YANG De-Ren; LI Ming; CHEN Tao; WANG Lei; QUE Duan-Lin;
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State Key Laboratory of Silicon Materials and Department of Material Science and Engineering,Zhejiang University,Hangzhou,310027;

State Key Laboratory of Silicon Materials and Department of Material Science and Engineering,Zhejiang University,Hangzhou,310027;

State Key Laboratory of Silicon Materials and Department of Material Science and Engineering,Zhejiang University,Hangzhou,310027;

State Key Laboratory of Silicon Materials and Department of Material Science and Engineering,Zhejiang University,Hangzhou,310027;

State Key Laboratory of Silicon Materials and Department of Material Science and Engineering,Zhejiang University,Hangzhou,310027;

State Key Laboratory of Silicon Materials and Department of Material Science and Engineering,Zhejiang University,Hangzhou,310027;

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中图分类物理学;
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Minority Carrier Lifetime in As-Grown Germanium Doped Czochralski Silicon

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