Low Density Self-Assembled InAs/GaAs Quantum Dots Grown by Metal Organic Chemical Vapour Deposition

LI Lin; LIU Guo-Jun; WANG Xiao-Hua; LI Mei; LI Zhan-Guo; WAN Chun-Ming

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Low Density Self-Assembled InAs/GaAs Quantum Dots Grown by Metal Organic Chemical Vapour Deposition

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The serf-assembled InAs quantum dots (QDs) on GaAs substrates with low density (5×108cm-2) are achieved using relatively higher growth temperature and low InAs coverage by low-pressure metal-organic chemical vapour deposition.The macro-PL spectra exhibit three emission peaks at 1361,1280 and 1204nm,corresponding to the ground level (GS),the first excited state (ES1) and the second excited state (ES2) of the QDs,respectively,which are obtained when the GaAs capping layer/s grown using triethylgallium and tertiallybutylarsine.As a result of micro-PL,only a few peaks from individual dots have been observed.The exciton-biexciton behaviour was clearly observed at low temperature.

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《中国物理快报：英文版》 |2008年第2期|667-670|共4页
作者
LI Lin; LIU Guo-Jun; WANG Xiao-Hua; LI Mei; LI Zhan-Guo; WAN Chun-Ming;
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National Key Lab of High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun,130022;

National Key Lab of High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun,130022;

National Key Lab of High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun,130022;

National Key Lab of High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun,130022;

National Key Lab of High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun,130022;

National Key Lab of High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun,130022;

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中图分类物理学;
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Low Density Self-Assembled InAs/GaAs Quantum Dots Grown by Metal Organic Chemical Vapour Deposition

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