首页> 中文期刊> 《中国物理快报:英文版》 >Double-Exponentially Decayed Photoionization in CREI Effect:Numerical Experiment on 3D H+2

Double-Exponentially Decayed Photoionization in CREI Effect:Numerical Experiment on 3D H+2

         

摘要

On the platform of the 3D H+2 system,we perform a numerical simulation of its photoionization rate under excitation of weak to intense laser intensities with varying pulse durations and wavelengths.A novel method is proposed for calculating the photoionization rate:a double exponential decay of ionization probability is best suited for fitting this rate.Confirmation of the well-documented charge-resonance-enhanced ionization (CREI)effect at medium laser intensity and finding of ionization saturation at high light intensity corroborate the robustness of the suggested double-exponential decay process.Surveying the spatial and temporal variations of electron wavefunctions uncovers a mechanism for the double-exponentially decayed photoionization probability as onset of electron ionization along extra degree of freedom.Henceforth,the new method makes clear the origins of peak features in photoionization rate versus internuclear separation.It is believed that this multi-exponentially decayed ionization mechanism is applicable to systems with more degrees of motion.

著录项

  • 来源
    《中国物理快报:英文版》 |2008年第2期|465-467|共3页
  • 作者单位

    College of Precision Instrument and Optoelectronics Engineering,Tianjin University,Tianjin,300072;

    Key Lab of Optoelectronic Information and Technical Science(Ministry of Education),Tianjin University,Tianjin,300072;

    College of Precision Instrument and Optoelectronics Engineering,Tianjin University,Tianjin,300072;

    Key Lab of Optoelectronic Information and Technical Science(Ministry of Education),Tianjin University,Tianjin,300072;

    College of Precision Instrument and Optoelectronics Engineering,Tianjin University,Tianjin,300072;

    Key Lab of Optoelectronic Information and Technical Science(Ministry of Education),Tianjin University,Tianjin,300072;

    College of Precision Instrument and Optoelectronics Engineering,Tianjin University,Tianjin,300072;

    Key Lab of Optoelectronic Information and Technical Science(Ministry of Education),Tianjin University,Tianjin,300072;

    Institute for Physical Science and Technology,University of Maryland at College Park,MD20742,USA;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 物理学;
  • 关键词

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