Hetero-Epitaxial Diamond Single Crystal Growth on Surface of cBN Single Crystals at High Pressure and High Temperature

GAO Feng; JIA Xiao-Peng; MA Hong-An; GUO Wei; LIU Xiao-Bing

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Hetero-Epitaxial Diamond Single Crystal Growth on Surface of cBN Single Crystals at High Pressure and High Temperature

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We report a new diamond synthesis process in which cubic boron nitride single crystals are used as seeds, Fe80Ni20 alloy powder is used as catalyst/solvent and natural flake-like graphite is used as the carbon source. The samples are investigated using laser Raman spectra and x-ray diffraction (XRD). Morphology of the sample is observed by a scanning electron microscope (SEM). Based on the measurement results, we conclude that diamond single crystals have grown on the cBN crystal seeds under the conditions of high temperature 1230℃ and high pressure 4.8 GPa. This work provides an original method for synthesis of high quality hereto-semiconductor with cBN and diamond single crystals, and paves the way for future development.

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《中国物理快报：英文版》 |2008年第6期|2273-2276|共4页
作者
GAO Feng; JIA Xiao-Peng; MA Hong-An; GUO Wei; LIU Xiao-Bing;
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作者单位

National Lab of Superhard Material, Jilin University, Changchun 130012;

National Lab of Superhard Material, Jilin University, Changchun 130012;

Institute of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000;

National Lab of Superhard Material, Jilin University, Changchun 130012;

National Lab of Superhard Material, Jilin University, Changchun 130012;

National Lab of Superhard Material, Jilin University, Changchun 130012;

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正文语种 chi
中图分类物理学;
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Hetero-Epitaxial Diamond Single Crystal Growth on Surface of cBN Single Crystals at High Pressure and High Temperature

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