Effect of A1 Doping on Properties of SiC Films

SU Jian-Feng; YAO Ran; ZHONG Ze; FU Zhu-Xi

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Effect of A1 Doping on Properties of SiC Films

机译：Al掺杂对SiC薄膜性能的影响

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Undoped and Al-doped 3C-SiC films are deposited on Si(lO0) substrates by low-pressure chemical vapour deposition. Effects of aluminium incorporation on crystaJlinity, strain stress, surface morphology and growth rate of SiC films have been investigated. The x-ray diffraction patterns and rocking curves indicate that the crystallinity is improved with aluminium doping. Raman scatting patterns also demonstrate that the strain stress in SiC films is released due to the incorporation of A1 ions and the increase of film thickness. Furthermore, due to the catalysis of surface reaction which is induced by trimethylaluminium, the growth rate is increased greatly and the growth process varies from three-dimensional island-growth mode to step-flow growth mode.

机译：通过低压化学气相沉积将未掺杂和Al掺杂的3C-SiC膜沉积在Si（10）衬底上。研究了铝掺入对SiC薄膜结晶度，应变应力，表面形貌和生长速率的影响。 X射线衍射图和摇摆曲线表明，铝掺杂改善了结晶度。拉曼散射图样还表明，由于引入了Al离子和膜厚的增加，SiC膜中的应变应力得以释放。此外，由于由三甲基铝引起的表面反应的催化，生长速率大大提高，并且生长过程从三维岛生长模式变化为步进流生长模式。

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《中国物理快报：英文版》 |2008年第9期|3346-3349|共4页
作者
SU Jian-Feng; YAO Ran; ZHONG Ze; FU Zhu-Xi;
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作者单位

Department of Physics, University of Science and Technology of China, Hefei 230026;

Department of Physics, University of Science and Technology of China, Hefei 230026;

Department of Physics, University of Science and Technology of China, Hefei 230026;

Department of Physics, University of Science and Technology of China, Hefei 230026;

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收录信息中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
原文格式 PDF
正文语种 chi
中图分类物理学;
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Effect of A1 Doping on Properties of SiC Films

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