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首页> 中文期刊> 《中国物理快报：英文版》 >Fabrication and Optical Characterization of GaN-Based Nanopillar Light Emitting Diodes

Fabrication and Optical Characterization of GaN-Based Nanopillar Light Emitting Diodes

         
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摘要

InGaN/GaN-multiple-quantum-well-based light emitting diode (LED) nanopillar arrays with a diameter of ap proximately 20Onm and a height of 70Onto are fabricated by inductively coupled plasma etching using Ni selfassembled nanodots as etching mask. In comparison to the as-grown LED sample an enhancement by a factor of four of photoluminescence (PL) intensity is achieved after the fabrication of nanopillars, and a blue shift and a decrease of full width at half maximum of the PL peak axe observed. The method of additional wet etching with different chemical solutions is used to remove the etch-induced damage. The result shows that the dilute HCI (HCI:H2O=1:l) treatment is the most effective. The PL intensity of nanopillar LEDs after such a treatment is about 3.5 times stronger than that before treatment.

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  • 来源
    《中国物理快报：英文版》 |2008年第9期|3485-3488|共4页
  • 作者

    ZHU Ji-Hong; SHI Yong-Sheng; LIU Su-Ying; YANG Hui; ZHANG Shu-Ming; SUN Xian; ZHAO De-Gang; ZHU Jian-Jun; LIU Zong-Shun; JIANG De-Sheng; DUAN Li-Hong; WANG Hai;

  • 作者单位

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences,PO Box 912, Beijing 100083;

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences,PO Box 912, Beijing 100083;

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences,PO Box 912, Beijing 100083;

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences,PO Box 912, Beijing 100083;

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences,PO Box 912, Beijing 100083;

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences,PO Box 912, Beijing 100083;

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences,PO Box 912, Beijing 100083;

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences,PO Box 912, Beijing 100083;

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences,PO Box 912, Beijing 100083;

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences,PO Box 912, Beijing 100083;

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences,PO Box 912, Beijing 100083;

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences,PO Box 912, Beijing 100083;

    Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 物理学;
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