Improved Light Extraction of GaN-based LEDs with Nano-roughened p-GaN Surfaces

GAO Hai-Yong; YAN Fa-Wang; FAN Zhong-Chao; LI Jin-Min; ZENG Yi-Ping; WANG Guo-Hong

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Improved Light Extraction of GaN-based LEDs with Nano-roughened p-GaN Surfaces

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p-GaN surfaces are nano-roughened by plasma etching to improve the optical performance of GaN-based light emitting diodes (LEDs). The nano-roughened GaN present a relaxation of stress. The iight extraction of the LEDs with nano-roughened surfaces is greatly improved when compared with that of the conventional LEDs without nano-roughening. PL-mapping intensities of the nano-roughened LED epi-wafers for different roughening times present two to ten orders of enhancement. The light output powers are also higher for the nano-roughened LED devices. This improvement is attributed to that nano-roughened surfaces can provide photons multiple chances to escape from the LED surfaces.

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《中国物理快报：英文版》 |2008年第9期|3448-3451|共4页
作者
GAO Hai-Yong; YAN Fa-Wang; FAN Zhong-Chao; LI Jin-Min; ZENG Yi-Ping; WANG Guo-Hong;
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作者单位

Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083;

Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083;

Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083;

Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083;

Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083;

Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083;

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中图分类物理学;
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Improved Light Extraction of GaN-based LEDs with Nano-roughened p-GaN Surfaces

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