Influence of Width of left Well on Intersubband Transitions in AlxGa1-x N/GaN Double Quantum Wells

LEI Shuang-Ying; SHEN Bo; ZHANG Guo-Yi

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Influence of Width of left Well on Intersubband Transitions in AlxGa1-x N/GaN Double Quantum Wells

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Influence of width of lett well in Alx Ga1-x N/GaN double quantum wells (DQWs) on absorption coefficients and wavelengths of the intersubband transitions (ISBTs) is investigated by solving the SchrSdinger and Poisson equations self-consistently. When the width of lett well is 1.79nm, three-energy-level DQ, Ws are realized. The ISBT between the first odd and second odd order subbands (the lodd-2odd ISBT) has a comparable absorption coeffcient with the 1odd-2even ISBT. Their wavelengths are located at 1.3 and 1.55μm, respectively. When the width of lett well is 1.48nm, a four-energy-level DQWs is realized. The calculated results have a possible application to ultrafast two-colour optoeleetronic devices operating within the optical communication wavelength range.

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《中国物理快报：英文版》 |2008年第9期|3385-3388|共4页
作者
LEI Shuang-Ying; SHEN Bo; ZHANG Guo-Yi;
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Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096;

State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871;

State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871;

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Influence of Width of left Well on Intersubband Transitions in AlxGa1-x N/GaN Double Quantum Wells

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