High-Temperature Characteristics of Ti/A1/Ni/Au Ohmic Contacts to n-GaN

ZHANG Yue-Zong; FENG Shi-Wei; GUO Chun-Sheng; ZHANG Guang-Chen; ZHUANG Si-Xiang; SU Rong; BAI Yun-Xia; LU Chang-Zhi

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High-Temperature Characteristics of Ti/A1/Ni/Au Ohmic Contacts to n-GaN

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We present the high-temperature characteristics of Ti/Al/Ni/Au(15 nm/220 nm/40nm/50nm) multiplayer contacts to n-type GaN (Nd = 3.7 × 1017 cm-3, Nd = 3.0 × 10l8 cm-3). The contact resistivity increases with the measurement temperature. Furthermore, the increasing tendency is related to doping concentration. The higher the doped, the slower the contact resistivity with decreasing measurement temperature. Ti/Al/Ni/Au ohmic contact to heavy doping n-GaN takes on better high temperature reliability. According to the analyses of XRD and AES for the n-GaN/Ti/Al/Ni/Au, the Au atoms permeate through the Ni layer which is not thick enough into the Al layer even the Ti layer.

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《中国物理快报：英文版》 |2008年第11期|4083-4085|共3页
作者
ZHANG Yue-Zong; FENG Shi-Wei; GUO Chun-Sheng; ZHANG Guang-Chen; ZHUANG Si-Xiang; SU Rong; BAI Yun-Xia; LU Chang-Zhi;
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School of Electron Information and Control Engineering,Beijing University of Technology,Beijing 100022;

School of Electron Information and Control Engineering,Beijing University of Technology,Beijing 100022;

School of Electron Information and Control Engineering,Beijing University of Technology,Beijing 100022;

School of Electron Information and Control Engineering,Beijing University of Technology,Beijing 100022;

School of Electron Information and Control Engineering,Beijing University of Technology,Beijing 100022;

School of Electron Information and Control Engineering,Beijing University of Technology,Beijing 100022;

School of Electron Information and Control Engineering,Beijing University of Technology,Beijing 100022;

School of Electron Information and Control Engineering,Beijing University of Technology,Beijing 100022;

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中图分类化学;
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High-Temperature Characteristics of Ti/A1/Ni/Au Ohmic Contacts to n-GaN

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