首页> 中文期刊> 《中国物理快报:英文版》 >MOCVD Growth and Characterization of Epitaxial AlxGa1-xN Films

MOCVD Growth and Characterization of Epitaxial AlxGa1-xN Films

         

摘要

We study the growth of AlxGa1-x N epilayers on (0001) sapphire by low-pressure MOCVD, using a low-temperature A1N buffer. By varying the input now rates of trimethylgallium (TMGa),e obtain crack-free AlGaN films in the whole range of composition. A linear relationship between gas and solid Al content is observed. The structural properties of the layers (x = 0 - 1) are investigated by x-ray diffraction, atomic force microscopy (AFM) and scanning electron microscopy (SEM).It is found that a two-direction growth appears along the c-axis and the (10(1)1) directions for x≥0.45.From the results of Raman spectroscopy, we suggest that the compressive stain and the lack of mobility of Al adatoms can induce the formation of (1011) grains.

著录项

  • 来源
    《中国物理快报:英文版》 |2007年第5期|1393-1396|共4页
  • 作者单位

    Key Laboratory of Advanced Photonic and Electronic Materials,epartment of Physics,anjing University,Nanjing 210093;

    Key Laboratory of Advanced Photonic and Electronic Materials,epartment of Physics,anjing University,Nanjing 210093;

    Key Laboratory of Advanced Photonic and Electronic Materials,epartment of Physics,anjing University,Nanjing 210093;

    Key Laboratory of Advanced Photonic and Electronic Materials,epartment of Physics,anjing University,Nanjing 210093;

    Department of Physics,chool of Applied Science,niversity of Science and Technology Beijing,eijing 100083;

    Key Laboratory of Advanced Photonic and Electronic Materials,epartment of Physics,anjing University,Nanjing 210093;

    Key Laboratory of Advanced Photonic and Electronic Materials,epartment of Physics,anjing University,Nanjing 210093;

    Key Laboratory of Advanced Photonic and Electronic Materials,epartment of Physics,anjing University,Nanjing 210093;

    Key Laboratory of Advanced Photonic and Electronic Materials,epartment of Physics,anjing University,Nanjing 210093;

    Key Laboratory of Advanced Photonic and Electronic Materials,epartment of Physics,anjing University,Nanjing 210093;

    Shanghai Institute of Technical Physics,hinese Academy of Sciences,hanghai 200083;

    Key Laboratory of Advanced Photonic and Electronic Materials,epartment of Physics,anjing University,Nanjing 210093;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 物理学;
  • 关键词

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号