Detection Wavelength of Strained Inx Ga1-x As/GaAs Very-Long-Wavelength Quantum Well Infrared Photodetectors

XIONG Da-Yuan; LI Ning; LI Zhi-Feng; ZHEN Hong-Lou; LU Wei

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Detection Wavelength of Strained Inx Ga1-x As/GaAs Very-Long-Wavelength Quantum Well Infrared Photodetectors

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Detection wavelength is one of the key performance indices of infrared photodetectors. We study the character of detection wavelength of the strained InxGa1-xAs/GaAs very-long-wavelength (＞12μm) quantum well infrared photodetectors (VLW-QWIPs) characterized by the photoluminescence (PL) and photocurrent (PC) measurements. Based on the theoretical calculation and experimental data, we have built a practical model for the InxGa1-xAs/GaAs strained VLW-QWIPs, from which the interband transitions, intersubband transition and peak detection wavelength can be determined. Afterwards, the dependences of detection wavelength and device operation mode on the In mole fraction and InxGa1-xAs well width are presented, which will be helpful for device design and optimization.

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《中国物理快报：英文版》 |2007年第5期|1403-1406|共4页
作者
XIONG Da-Yuan; LI Ning; LI Zhi-Feng; ZHEN Hong-Lou; LU Wei;
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作者单位

National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences, Shanghai 200083;

National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences, Shanghai 200083;

National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences, Shanghai 200083;

National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences, Shanghai 200083;

National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences, Shanghai 200083;

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正文语种 chi
中图分类物理学;
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Detection Wavelength of Strained Inx Ga1-x As/GaAs Very-Long-Wavelength Quantum Well Infrared Photodetectors

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