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Growth of Cu Films on Si(111)-7 × 7 Surfaces at Low Temperature: A Scanning Tunnelling Microscopy Study

         

摘要

Morphologies of Cu(111) Rims on Si(111)-7×7 surfaces prepared at low temperature are investigated by scanning tunnelling microscopy (STM) and reflection high-energy electron diffraction (RHEED). At the initial growth stage, Cu 61ms are Bat due to the formation of silicide at the interface that decreases the mismatch between Cu films and the Si substrate. Different from the usual multilayer growth of Cu/Cu(111), on the silicide layer a layer-by-layer growth is observed. The two dimensional (2D) growth is explained by the enhanced high island density at low deposition temperature. Increasing deposition rate produces films with different morphologies, which is the result of Ostwald ripening.

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  • 来源
    《中国物理快报:英文版》 |2007年第11期|3214-3217|共4页
  • 作者单位

    Institute of Physics, Chinese Academy of Sciences, Beijing 100080;

    Institute of Physics, Chinese Academy of Sciences, Beijing 100080;

    Institute of Physics, Chinese Academy of Sciences, Beijing 100080;

    Institute of Physics, Chinese Academy of Sciences, Beijing 100080;

    Institute of Physics, Chinese Academy of Sciences, Beijing 100080;

    Institute of Physics, Chinese Academy of Sciences, Beijing 100080;

    Institute of Physics, Chinese Academy of Sciences, Beijing 100080;

    Department of Physics, Tsinghua University, Beijing 100084;

    Institute of Physics, Chinese Academy of Sciences, Beijing 100080;

    Department of Physics, Tsinghua University, Beijing 100084;

    Institute of Physics, Chinese Academy of Sciences, Beijing 100080;

    Department of Physics, Tsinghua University, Beijing 100084;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 物理学;
  • 关键词

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