Strain Compensated AlInGaAs/InGaAs/InAs Triangular Quantum Wells for Lasing Wavelength beyond 2 μm

GU Yi; ZHANG Yong-Gang; LIU Sheng

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Strain Compensated AlInGaAs/InGaAs/InAs Triangular Quantum Wells for Lasing Wavelength beyond 2 μm

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摘要

The subband energy and lasing wavelength of compressively strained triangular In0.53Ga0.47As/JnAs quantum well are calculated and compared with the conventional rectangular ones with the same strain contents. The strain compensation using Al0.33In0.36Ga0.31 As barrier is introduced. The results show that lasing wavelength can be extended dramatically to beyond 2.8 μm by changing the energy band from the conventional rectangular shape to a triangular one, the realization of such a structure using molecular beam epitaxy technology is also discussed.

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《中国物理快报：英文版》 |2007年第11期|3237-3240|共4页
作者
GU Yi; ZHANG Yong-Gang; LIU Sheng;
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作者单位

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

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正文语种 chi
中图分类物理学;
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Strain Compensated AlInGaAs/InGaAs/InAs Triangular Quantum Wells for Lasing Wavelength beyond 2 μm

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