首页> 中文期刊> 《中国物理快报:英文版》 >Room-Temperature Ferromagnetism of Ga1-xMnxN Grown by Low-Pressure Metalorganic Chemical Vapour Deposition

Room-Temperature Ferromagnetism of Ga1-xMnxN Grown by Low-Pressure Metalorganic Chemical Vapour Deposition

         

摘要

@@ Epitaxial films of Ga1-xMnxN have been grown on c-sapphire substrates by low-pressure metal-organic vapour phase epitaxy. The samples show ferromagnetic behaviour up to a temperature of T = 380 K with hysteresis curves showing a coercivity of 50-100Oe. No ferromagnetic second phases and no significant deterioration in crystal quality with the incorporation of Mn can be detected by high-resolution x-ray diffraction. The result of x-ray absorption near-edge structures indicates that Mn atoms substitute for Ga atoms. The Mn concentrations of the layers are determined to reach x = 0.038 by proton-induced x-ray emission.

著录项

  • 来源
    《中国物理快报:英文版》 |2006年第5期|1286-1288|共3页
  • 作者单位

    School of Physics, Materials Physics Laboratory, Peking University, Beijing 100871;

    Research Center for Wide-Band Semiconductors, Peking University, Beijing 100871;

    State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871;

    School of Physics, Materials Physics Laboratory, Peking University, Beijing 100871;

    Research Center for Wide-Band Semiconductors, Peking University, Beijing 100871;

    State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871;

    School of Physics, Materials Physics Laboratory, Peking University, Beijing 100871;

    Research Center for Wide-Band Semiconductors, Peking University, Beijing 100871;

    State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871;

    School of Physics, Materials Physics Laboratory, Peking University, Beijing 100871;

    Research Center for Wide-Band Semiconductors, Peking University, Beijing 100871;

    State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871;

    School of Physics, Materials Physics Laboratory, Peking University, Beijing 100871;

    Research Center for Wide-Band Semiconductors, Peking University, Beijing 100871;

    State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871;

    Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049;

    School of Physics, Materials Physics Laboratory, Peking University, Beijing 100871;

    Research Center for Wide-Band Semiconductors, Peking University, Beijing 100871;

    State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871;

    School of Physics, Materials Physics Laboratory, Peking University, Beijing 100871;

    Research Center for Wide-Band Semiconductors, Peking University, Beijing 100871;

    State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871;

    School of Physics, Materials Physics Laboratory, Peking University, Beijing 100871;

    Research Center for Wide-Band Semiconductors, Peking University, Beijing 100871;

    School of Physics, Materials Physics Laboratory, Peking University, Beijing 100871;

    Research Center for Wide-Band Semiconductors, Peking University, Beijing 100871;

    State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 物理学;
  • 关键词

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