首页> 中文期刊> 《中国物理快报:英文版》 >Compact, Low Threshold Nd3+:YVO4 Self-Raman Laser at 1178nm

Compact, Low Threshold Nd3+:YVO4 Self-Raman Laser at 1178nm

         

摘要

@@ A compact low-threshold Raman laser at 1178nm is experimentally realized by using a diode-end-pumped actively Q-switched Nd3+ : YVO4 self-Raman laser. The threshold is 370mW at a pulse repetition frequency of 5 kHz. The maximum Raman laser output is 182mW with the pulse duration smaller than 20ns at a pulse repetition frequency of 30 kHz with 1.8W incident power. The optical efficiency from the incident power to the Raman laser is 10% and the slope efficiency is 13.5%.

著录项

  • 来源
    《中国物理快报:英文版》 |2006年第8期|2095-2097|共3页
  • 作者单位

    Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033;

    Graduate School of the Chinese Academy of Sciences, Beijing 100080;

    Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033;

    Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033;

    Graduate School of the Chinese Academy of Sciences, Beijing 100080;

    Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033;

    Graduate School of the Chinese Academy of Sciences, Beijing 100080;

    Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033;

    Graduate School of the Chinese Academy of Sciences, Beijing 100080;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 物理学;
  • 关键词

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