Damascene Array Structure of Phase Change Memory Fabricated with Chemical Mechanical Polishing Method

LIU Qi-Bin; SONG Zhi-Tang; ZHANG Kai-Liang; WANG Liang-Yong; FENG Song-Lin; CHEN Bomy

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Damascene Array Structure of Phase Change Memory Fabricated with Chemical Mechanical Polishing Method

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@@ A damascene structure of phase change memory (PCM) is fabricated successfully with the chemical mechanical polishing (CMP) method, and the CMP of Ge2Sb2Te5 (GST) and Ti films is investigated. The polished surface of wafer is analysed by scanning electron microscopy (SEM) and an energy dispersive spectrometer (EDS). The measurements show that the damascene device structure of phase change memory is achieved by the CMP process.After the top electrode is deposited, dc sweeping test on PCM reveals that the phase change can be observed.The threshold current of array cells varies between 0.90mA and 1.15mA.

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《中国物理快报：英文版》 |2006年第8期|2296-2298|共3页
作者
LIU Qi-Bin; SONG Zhi-Tang; ZHANG Kai-Liang; WANG Liang-Yong; FENG Song-Lin; CHEN Bomy;
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作者单位

Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

Graduate School of Chinese Academy of Sciences, Beijing 100039;

Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050;

Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086, USA;

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中图分类物理学;
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Damascene Array Structure of Phase Change Memory Fabricated with Chemical Mechanical Polishing Method

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