Improved Performance by a Double-Insulator Layer in Organic Thin-Film Transistors

WANG Wei; SHI Jia-Wei; GUO Shu-Xu; ZHANG Hong-Mei; QUAN Bao-Fu; MA Dong-Ge

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Improved Performance by a Double-Insulator Layer in Organic Thin-Film Transistors

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@@ Organic thin film transistors based on pentacene are fabricated by the method of full evaporation. The thickness of insulator film can be controlled accurately, which influences the device operation voltage markedly. Compared to the devices with a single-insulator layer, the electric performance of devices by using a double-insulator as the gate dielectric has good improvement. It is found that the gate leakage current can be reduced over one order of magnitude, and the on-state current can be enhanced over one order of magnitude. The devices with double-insulator layer exhibit field-effect mobility as large as 0.14 cm2/Vs and near the zero threshold voltage.The results demonstrate that using a proper double insulator as the gate dielectrics is an effective method to fabricate OTFTs with high electrical performance.

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《中国物理快报：英文版》 |2006年第11期|3108-3110|共3页
作者
WANG Wei; SHI Jia-Wei; GUO Shu-Xu; ZHANG Hong-Mei; QUAN Bao-Fu; MA Dong-Ge;
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作者单位

National Key Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130012;

Graduate School of the Chinese Academy of Sciences, Beijing 100049;

National Key Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130012;

National Key Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130012;

National Key Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130012;

National Key Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130012;

State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022;

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正文语种 chi
中图分类物理学;
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Improved Performance by a Double-Insulator Layer in Organic Thin-Film Transistors

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