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Nanomorph Silicon Thin Films Prepared by Using an HW-MWECR CVD System

         

摘要

@@ We have prepared hydrogenated nano-amorph silicon (na-Si:H) films by using a hot-wire-assisted microwave electron-cyclotron-resonance (HW-MWECR) chemical vapour deposition (CVD) system. The films are deposited in two steps: in the first 9min, a hydrogenated amorphous silicon layer is deposited by using hydrogen-diluted silane with a concentration of SiH4/(SiH4+H2) = 20%, and then a nanocrystalline silicon (nc-Si) layer is deposited by using various highly hydrogen-diluted silane. The Raman TO-like mode peak of the films was found in the range 497-508 cm-1. When the silane concentration used for preparation of the nc-Si layer is 14.3%, the film has a large crystalline volume fraction of 65.4%, a wide optical band gap of 1.89eV and a low hydrogen content of 9.5at.%. Moreover, the na-Si:H films rather than nc-Si possess high photosensitivity of about 15.

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  • 来源
    《中国物理快报:英文版》 |2005年第5期|1260-1263|共4页
  • 作者单位

    Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100022;

    Institute of Jingdezhen Ceramic, Jingdezhen 333001;

    Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100022;

    Institute of Jingdezhen Ceramic, Jingdezhen 333001;

    Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100022;

    Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100022;

    Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100022;

    Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100022;

    Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100022;

    Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100022;

    Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100022;

    Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100022;

    Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100022;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 物理学;
  • 关键词

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