Calculation of Resistivity of the Insulating Layer in Tunnelling-Magnetoresistive Head by Fast Green Function Method

WEI Dan; PIAO Kun; QIN Jian; DONG Zhong

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Calculation of Resistivity of the Insulating Layer in Tunnelling-Magnetoresistive Head by Fast Green Function Method

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@@ We calculate the resistivity of the insulating layer in a tunnelling-magnetoresistive (TMR) magnetic head byusing the Landauer-Büttiker formula with a fast Green function method, where a recursive process with a faster simulation speed and higher accuracy is carried out to substitute the inversion of Green's matrix. A tight-binding model with an energy barrier △ E is utilized to simulate the magnetoresistive tunnelling junction in the TMR head. The resistivity of the insulating layer is 2.6 × 105μΩcm with two oxygen-ion layers and △E = 2.5 eV, which agrees with the experimental data.

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《中国物理快报：英文版》 |2005年第8期|2063-2065|共3页
作者
WEI Dan; PIAO Kun; QIN Jian; DONG Zhong;
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Lab of Advanced Materials, Dept. of Materials Science and Engineering, Tsinghua University, Beijing 100084;

Lab of Advanced Materials, Dept. of Materials Science and Engineering, Tsinghua University, Beijing 100084;

Lab of Advanced Materials, Dept. of Materials Science and Engineering, Tsinghua University, Beijing 100084;

Lab of Advanced Materials, Dept. of Materials Science and Engineering, Tsinghua University, Beijing 100084;

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中图分类物理学;
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Calculation of Resistivity of the Insulating Layer in Tunnelling-Magnetoresistive Head by Fast Green Function Method

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