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Structural and Electrical Properties of Amorphous Hydrogen Carbon-Nitrogen Films

         

摘要

@@ Amorphous hydrogenated carbon-nitrogen (a-C:H:(N)) films with different nitrogen contents have been deposited by using rf-sputtering of a high purity graphite target in an Ar-H2-N2 atmosphere. Transmittance and reflectance spectra are used to characterize the Tauc gap and absorption coefficients in the wavelength range 0.185-3.2μm.The temperature dependence of conductivity demonstrates a hopping mechanism of the Fermi level in the temperature range of 77-300K. The density of state at the Fermi level is derived from the direct current conductivity.The photoluminescence properties of a-C:H:N films were investigated. The photoluminescence peak has a blue shift with increasing excitation energy. These results are discussed on the basis of a model in which the different sp2 clusters dispersed in sp3 matrices.

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  • 来源
    《中国物理快报:英文版》 |2004年第2期|400-402|共3页
  • 作者单位

    Center for Advanced Opto-Electronic Functional Material Research, Northeast Normal University, Changchun 130024;

    Center for Advanced Opto-Electronic Functional Material Research, Northeast Normal University, Changchun 130024;

    Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanism and Physics, Chinese Academy of Sciences, Changchun 13;

    Center for Advanced Opto-Electronic Functional Material Research, Northeast Normal University, Changchun 130024;

    Center for Advanced Opto-Electronic Functional Material Research, Northeast Normal University, Changchun 130024;

    Center for Advanced Opto-Electronic Functional Material Research, Northeast Normal University, Changchun 130024;

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