CdZnTe Energy Levels Induced by Doping of Indium

LI Guo-Qiang; JIE Wan-Qi; GU Zhi; YANG Ge; WANG Tao

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CdZnTe Energy Levels Induced by Doping of Indium

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@@ Photoluminescence (PL) and infrared transmission spectra are used to characterize In-doped Cd0.9Zn0.1 Te (CdZnTe:In).The PL spectrum reveals that there are two other strong emissions situated at 1.54 eV and 1.62eV as well as the near band edge emission. This indicates that the doped In can lead to two donor levels of 0.12eV and 0.04eV in the CdZnTe band construction, respectively. The IR transmission spectra show that when the wavenumber is larger than 1000cm-1, the CdZnTe:In was almost opaque to the IR emission. Then its IR transmission rapidly increases to 52% when the wavenumber is decreased to 350cm-1 and then holds constant. This confirms the existence of the donor level of 0.12 eV.

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《中国物理快报：英文版》 |2004年第2期|367-369|共3页
作者
LI Guo-Qiang; JIE Wan-Qi; GU Zhi; YANG Ge; WANG Tao;
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State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072;

State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072;

State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072;

State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072;

State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072;

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CdZnTe Energy Levels Induced by Doping of Indium

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