@@ We study a SiC-based diode with a p+nn+ structure for picosecond semiconductor closing switch and discuss the physical process, which underlies the operation principle of high-power closing switch based on a delayed breakdown diode. By two-dimensional mixed device-circuit simulations, we demonstrate a single device reliably operated at 4kV and at risetime 11ps with high output dV/dt = 276 kVs, which is in good agreement with the experimental results.
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