首页> 中文期刊> 《中国物理快报:英文版》 >Growth of MgB2 Thin Films by Chemical Vapour Deposition Using B2H6 as a boron Source

Growth of MgB2 Thin Films by Chemical Vapour Deposition Using B2H6 as a boron Source

         

摘要

Superconducting MgB2 thin films were grown on single crystal Al2O3 (0001) by chemical vapour deposition using B2H6 as a boron source. MgB2 film was then accomplished by annealing the boron precursor films in the presence of high-purity magnesium bulk at 890℃ in vacuum. The as-grown MgB2 films are smooth and c-axis-oriented.The films exhibit a zero-resistance transition of about 38K with a narrow transition width of 0.2 K. Magnetic hysteresis measurements yield the critical current density of 1.9 × 107 A/cm2 at 10 K in zero field.

著录项

  • 来源
    《中国物理快报:英文版》 |2003年第8期|1356-1358|共3页
  • 作者单位

    Laboratory of Optical Physics, Institute of Physics and Center for Condensed Mater Physics,Chinese Academy of Sciences, Beijing 100080;

    Laboratory of Optical Physics, Institute of Physics and Center for Condensed Mater Physics,Chinese Academy of Sciences, Beijing 100080;

    Laboratory of Optical Physics, Institute of Physics and Center for Condensed Mater Physics,Chinese Academy of Sciences, Beijing 100080;

    Laboratory of Optical Physics, Institute of Physics and Center for Condensed Mater Physics,Chinese Academy of Sciences, Beijing 100080;

    Laboratory of Optical Physics, Institute of Physics and Center for Condensed Mater Physics,Chinese Academy of Sciences, Beijing 100080;

    Laboratory of Optical Physics, Institute of Physics and Center for Condensed Mater Physics,Chinese Academy of Sciences, Beijing 100080;

    Laboratory of Optical Physics, Institute of Physics and Center for Condensed Mater Physics,Chinese Academy of Sciences, Beijing 100080;

    Laboratory of Optical Physics, Institute of Physics and Center for Condensed Mater Physics,Chinese Academy of Sciences, Beijing 100080;

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