A Passively Mode-Locked Diode-End-Pumped Nd:YAG Laser with a Semiconductor Saturable Absorber Mirror Grown by Metal Organic Chemical Vapour Deposition

王勇刚; 马骁宇; 李春勇; 张治国; 张丙元; 张志刚

首页> 中文期刊> 《中国物理快报：英文版》 >A Passively Mode-Locked Diode-End-Pumped Nd:YAG Laser with a Semiconductor Saturable Absorber Mirror Grown by Metal Organic Chemical Vapour Deposition

A Passively Mode-Locked Diode-End-Pumped Nd:YAG Laser with a Semiconductor Saturable Absorber Mirror Grown by Metal Organic Chemical Vapour Deposition

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相关主题

摘要

We report the experimental results of a mode-locked diode-end-pumped Nd:YAG laser with a semiconductor saturable absorber mirror(SESAM)from which we achieved a 10ps pulse duration at 150MHz repetition rate.The SESAM was grown by metal organic chemical vapour deposition at low temperature.The recovery time was measured to be 0.5 ps,indicating the potential pulse compression to sub-picoseconds.

著录项

来源
《中国物理快报：英文版》 |2003年第11期|1960-1962|共3页
作者
王勇刚; 马骁宇; 李春勇; 张治国; 张丙元; 张志刚;
展开▼
作者单位

Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;

Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;

Institute of Physics,Chinese Academy of Sciences,Beijing 100080;

Institute of Physics,Chinese Academy of Sciences,Beijing 100080;

School of Laser Engineering,Beijing University of Technology,Beijing 100022;

College of Physics Science and Information Engineering,Liaocheng University,Liaocheng 252059;

School of Laser Engineering,Beijing University of Technology,Beijing 100022;

展开▼
原文格式 PDF
正文语种 chi
中图分类
关键词

A Passively Mode-Locked Diode-End-Pumped Nd:YAG Laser with a Semiconductor Saturable Absorber Mirror Grown by Metal Organic Chemical Vapour Deposition

摘要

著录项

相关主题

期刊订阅