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《中国物理快报：英文版》
>Comparative Study of Properties of ZnO/GaN/Al2O3 and ZnO/Al2O3 Films Grown by Low-Pressure Metal Organic Chemical Vapour Deposition
Comparative Study of Properties of ZnO/GaN/Al2O3 and ZnO/Al2O3 Films Grown by Low-Pressure Metal Organic Chemical Vapour Deposition
ZnO films were deposited by low-pressure metal organic chemical vapour deposition on epi-GaN/Al2O3 films and c-Al2O3 substrates.The structure and optical properties of the ZnO/GaN/Al2O3 and ZnO/Al2O3 films have been investigated to determine the differences between the two substrates.ZnO films on GaN/Al2O3 show very strong emission features associated with exciton transitions,just as ZnO films on Al2O3,while the crystalline structural qualities for ZnO films on GaN/Al2O3 are much better than those for ZnO films directly grown on Al2O3 substrates.Zn and O elements in the deposited ZnO/GaN/Al2O3 and ZnO/Al2O3 films are investigated and compared by x-ray photoelectron spectroscopy.According to the statistical results,the Zn/O ratio changes from Zn-rich for ZnO/Al2O3 films to O-rich for ZnO/GaN/Al2O3 films.
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