Photoluminescence of Self-Assembled InAs/GaAs Quantum Dots Covered by InAlAs and InGaAs Combination Strain-Reducing Layer

方志丹; 龚政; 苗振华; 徐晓华; 倪海桥; 牛智川

首页> 中文期刊> 《中国物理快报：英文版》 >Photoluminescence of Self-Assembled InAs/GaAs Quantum Dots Covered by InAlAs and InGaAs Combination Strain-Reducing Layer

Photoluminescence of Self-Assembled InAs/GaAs Quantum Dots Covered by InAlAs and InGaAs Combination Strain-Reducing Layer

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相关主题

摘要

Self-assembled InAs/GaAs quantum dots covered by the 1-nm InxAl(1-x)As(x = 0.2,0.3)and 3-nm In0.2Gao.8As combination strain-reducing layer are fabricated,whose height can take up to 30-46nm.The luminescence emission at a long-wavelength of 1.33 μm and the energy separation between the ground and the first-excited state of 86meV are observed at room temperature.Furthermore,comparative study proves that the energy separation can increase to 91 meV by multiple stacking.

著录项

来源
《中国物理快报：英文版》 |2003年第11期|2061-2063|共3页
作者
方志丹; 龚政; 苗振华; 徐晓华; 倪海桥; 牛智川;
展开▼
作者单位

National Laboratoryfor Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;

National Laboratoryfor Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;

National Laboratoryfor Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;

National Laboratoryfor Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;

National Laboratoryfor Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;

National Laboratoryfor Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;

展开▼
原文格式 PDF
正文语种 chi
中图分类
关键词

Photoluminescence of Self-Assembled InAs/GaAs Quantum Dots Covered by InAlAs and InGaAs Combination Strain-Reducing Layer

摘要

著录项

相关主题

期刊订阅