A Novel Contactless Method for Characterization of Semiconductors: Surface Electron Beam Induced Voltage in Scanning Electron Microscopy

朱世秋; E.I.RAU; 杨富华; 郑厚植

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A Novel Contactless Method for Characterization of Semiconductors: Surface Electron Beam Induced Voltage in Scanning Electron Microscopy

机译：一种新型的半导体非接触式表征方法：扫描电子显微镜中的表面电子束感应电压

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We present a novel contactless and nondestructive method called the surface electron beam induced voltage (SEBIV) method for characterizing semiconductor materials and devices. The SEBIV method is based on the detection of the surface potential induced by electron beams of scanning electron microscopy (SEM). The core part of the SEBIV detection set-up is a circular metal detector placed above the sample surface. The capacitance between the circular detector and whole surface of the sample is estimated to be about 0.64pf. It is large enough for the detection of the induced surface potential. The irradiation mode of electron beam (e-beam) influences the signal generation. When the e-beam irradiates on the surface of semiconductors continuously, a differential signal is obtained. The real distribution of surface potentials can be obtained when a pulsed e-beam with a fixed frequency is used for irradiation and a lock-in amplifier is employed for detection. The polarity of induced potential depends on the structure of potential barriers and surface states of samples. The contrast of SEBIV images in SEM changes with irradiation time and e-beam intensity.

机译：我们提出了一种新颖的无接触非破坏性方法，称为表面电子束感应电压（SEBIV）方法，用于表征半导体材料和器件。 SEBIV方法基于对扫描电子显微镜（SEM）的电子束感应的表面电势的检测。 SEBIV检测装置的核心部分是放置在样品表面上方的圆形金属检测器。圆形检测器与样品整个表面之间的电容估计约为0.64pf。它足够大以检测感应的表面电势。电子束（电子束）的照射方式会影响信号的产生。当电子束连续照射在半导体表面上时，获得差分信号。当使用固定频率的脉冲电子束辐照并使用锁定放大器进行检测时，可以获得表面电势的真实分布。感应电位的极性取决于势垒的结构和样品的表面状态。 SEM中SEBIV图像的对比度随照射时间和电子束强度而变化。

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《中国物理快报：英文版》 |2002年第9期|1329-1332|共4页
作者
朱世秋; E.I.RAU; 杨富华; 郑厚植;
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作者单位

National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

Department of Physics, Moscow State University, Moscow 119899, Russia;

National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;

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中图分类物理学;
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A Novel Contactless Method for Characterization of Semiconductors: Surface Electron Beam Induced Voltage in Scanning Electron Microscopy

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